The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Aug. 28, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Alexander Kalnitsky, San Francisco, CA (US);

Wei-Cheng Wu, Hsinchu County, TW;

Harry-Hak-Lay Chuang, Hsinchu County, TW;

Chia Wen Liang, Hsinchu County, TW;

Li-Feng Teng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76805 (2013.01); H01L 21/76834 (2013.01); H01L 23/5256 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes a substrate, an isolation structure, a conductive structure, and a first contact structure. The isolation structure is disposed in the substrate. The conductive structure is disposed on the isolation structure. The conductive structure extends upwards from the isolation structure, in which the first contact structure has a top portion on the conductive structure and a bottom portion in contact with the isolation structure.


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