The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

May. 27, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Hongxia Feng, Chandler, AZ (US);

Jeremy Ecton, Gilbert, AZ (US);

Aleksandar Aleksov, Chandler, AZ (US);

Haobo Chen, Chandler, AZ (US);

Xiaoying Guo, Chandler, AZ (US);

Brandon C. Marin, Gilbert, AZ (US);

Zhiguo Qian, Chandler, AZ (US);

Daryl Purcell, Chandler, AZ (US);

Leonel Arana, Phoenix, AZ (US);

Matthew Tingey, Mesa, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5222 (2013.01); H01L 23/66 (2013.01);
Abstract

Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.


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