The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Feb. 16, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jiun-Yi Wu, Taoyuan, TW;

Chen-Hua Yu, Hsinchu, TW;

Yu-Min Liang, Taoyuan, TW;

Jung-Wei Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/565 (2013.01); H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2224/221 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/2783 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A semiconductor structure includes a substrate component, an IC die component over the substrate component, and a composite redistribution structure interposed between and electrically coupled to the substrate and IC die components. The composite redistribution structure includes a local interconnect component between a first redistribution structure overlying the substrate component and a second redistribution structure underlying the IC die component, and an insulating encapsulation between the first and second redistribution structures and embedding the local interconnect component therein. The local interconnect component includes TSVs penetrating through a substrate and electrically coupled to first and second conductive connectors, the first conductive connectors between the first redistribution structure and a first side of the substrate, the second conductive connectors between the second redistribution structure and a second side of the substrate, and a first insulating layer between the first redistribution structure and the first side and laterally covering the first conductive connectors.


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