The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Sep. 01, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Dimitri Houssameddine, Sunnyvale, CA (US);

Kangguo Cheng, Schenectady, NY (US);

Julien Frougier, Albany, NY (US);

Bruce B. Doris, Hartsdale, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10B 61/10 (2023.02);
Abstract

A memory device that includes an magnetoresistive random-access memory (MRAM) stack positioned on an electrode, a metal line in contact with the electrode, and a sidewall spacer abutting the MRAM stack. The memory device also includes a stepped reach through conductor having a first height portion of the stepped reach through conductor in an undercut region positioned between the sidewall spacer and the metal line, and a second height portion having a greater height dimensions than the first height portion abutting an outer sidewall of the sidewall spacer.


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