The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Dec. 14, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Mrunal Abhijith Khaderbad, Hsinchu, TW;
Wei-Yen Woon, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure provides source/drain epitaxial structures and source/drain contacts wrapped with graphene layers in fin structures of field effect transistors, and fabricating methods thereof. In some embodiments, a disclosed semiconductor device includes a fin structure on a substrate. The fin structure includes an epitaxial region. The semiconductor device further includes a metal contact above the epitaxial region, and a graphene film covering a top surface and sidewalls of the epitaxial region and covering a bottom surface and sidewalls of the metal contact.