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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12243833 B1

PDFFull Text
Date of Patent:
Mar. 04, 2025

Filed:

Nov. 02, 2020

Semiconductor device with electromagnetic interference film and method of manufacture

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Hsi Wu, Hsinchu, TW;

Hsien-Wei Chen, Hsinchu, TW;

Li-Hsien Huang, Zhubei, TW;

Tien-Chung Yang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/31058 (2013.01); H01L 21/32051 (2013.01); H01L 21/32115 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/97 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/5389 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method includes forming a first semiconductor device, wherein the first semiconductor device includes a top surface and a bottom surface, and wherein the first semiconductor device includes a metal layer having an exposed first surface. The method also includes forming a Electromagnetic Interference (EMI) layer over the top surface and sidewalls of the first semiconductor device, wherein the EMI layer electrically contacts the exposed first surface of the metal layer. The method also includes forming a molding compound over the EMI layer.

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