The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

May. 06, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Huan Fu, Tainan, TW;

Ying-Tsung Chen, Tainan, TW;

Jiun-Jie Huang, Kaohsiung, TW;

Wen-Han Hung, Tainan, TW;

Jen-Pan Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03466 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/014 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0496 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01);
Abstract

A semiconductor device includes a device layer, a first passivation layer, an aluminum pad, a second passivation layer, an under-ball metallurgy (UBM) pad and a connector. The device layer is disposed over a substrate, wherein the device layer includes a top metal feature. The first passivation layer is disposed over the device layer. The aluminum pad penetrates through the first passivation layer and is electrically connected to the top metal feature. The second passivation layer is disposed over the aluminum pad. The UBM pad penetrates through the second passivation layer and is electrically connected to the aluminum pad. The connector is disposed over the UBM pad. In some embodiments, a first included angle between a sidewall and a bottom of the aluminum pad is greater than a second included angle between a sidewall and a bottom of the UBM pad.


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