The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Aug. 24, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Wei Chen, Hsinchu, TW;
Chi-Sheng Lai, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Jian-Hao Chen, Hsinchu, TW;
Kuo-Feng Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A transistor is provided. The transistor includes a first source/drain epitaxial feature, a second source/drain epitaxial feature, and two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The two or more semiconductor layers comprise different materials. The transistor further includes a gate electrode layer surrounding at least a portion of the two or more semiconductor layers, wherein the transistor has two or more threshold voltages.