The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Jul. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yuan-Chih Hsieh, Hsinchu, TW;

Hsing-Lien Lin, Hsinchu, TW;

Jung-Huei Peng, Hsinchu, TW;

Yi-Chien Wu, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); B81B 3/00 (2006.01); H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0005 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/04 (2013.01);
Abstract

The present disclosure provides a structure and method of fabricating the structure. The structure comprises a cavity enclosed by a first substrate and a second substrate opposite to the first substrate. Further, the structure includes a feature in the cavity and the feature is protruded from a surface of the first substrate. In addition, the structure includes a dielectric layer over the feature, wherein the dielectric layer includes a first surface in contact with the feature and a second surface opposite to the first surface is positioned toward the cavity.


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