The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Apr. 04, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Chun Miao, Taichung, TW;

Kai-Chiang Wu, Hsinchu, TW;

Shih-Wei Liang, Dajia Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 24/04 (2013.01); H01L 24/07 (2013.01); H01L 24/10 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 23/3114 (2013.01); H01L 23/3192 (2013.01); H01L 23/525 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/02245 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/03424 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/10145 (2013.01); H01L 2224/11013 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11916 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/1413 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/013 (2013.01); H01L 2924/01322 (2013.01);
Abstract

A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.


Find Patent Forward Citations

Loading…