The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jun. 07, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Nien Su, Hsinchu, TW;
Jyu-Horng Shieh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a first mandrel and a second mandrel over a dielectric layer, and forming a first spacer and a second spacer on the first mandrel and the second mandrel, respectively. The first spacer and the second spacer are next to each other with a space in between. The dielectric layer is etched to form an opening in the dielectric layer, with the opening being overlapped by the space, and with the first spacer and the second spacer being used as a part of an etching mask in the etching. A conductive material is filled into the opening. A planarization process is performed on the conductive material.