The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Sep. 01, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Akhil Singhal, Portland, OR (US);
Allison Yau, Cupertino, CA (US);
Sang-Jin Kim, Santa Clara, CA (US);
Zeqiong Zhao, Santa Clara, CA (US);
Zhijun Jiang, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Ganesh Balasubramanian, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.