The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Sep. 10, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-I Chu, Taipei, TW;

Han-De Chen, Hsinchu, TW;

Chen-Fong Tsai, Hsinchu, TW;

Jyh-Cherng Sheu, Hsinchu, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/26 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01J 37/32422 (2013.01); H01J 37/32715 (2013.01); H01L 21/02057 (2013.01); H01L 21/26 (2013.01); H01L 2224/83896 (2013.01);
Abstract

Wafer bonding apparatus and method are provided. A method includes performing a first plasma activation process on a first surface of a first wafer. The first plasma activation process forms a first high-activation region and a first low-activation region on the first surface of the first wafer. A first cleaning process is performed on the first surface of the first wafer. The first cleaning process forms a first plurality of silanol groups in the first high-activation region and the first low-activation region. The first high-activation region includes more silanol groups than the first low-activation region. The first wafer is bonded to a second wafer.


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