The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jul. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Chenming Hu, Oakland, CA (US);
Shu-Jui Chang, Hsinchu County, TW;
Chen-Han Chou, Tainan, TW;
Yen-Teng Ho, Hsinchu, TW;
Chia-Hsing Wu, New Taipei, TW;
Kai-Yu Peng, Miaoli County, TW;
Cheng-Hung Shen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hinchu, TW;
Abstract
A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.