The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Liang Lin, Yilan County, TW;
Chia-Wen Zhong, Taichung, TW;
Yao-Wen Chang, Taipei, TW;
Min-Chang Ching, Zhubei, TW;
Kuo-Liang Lu, Hsinchu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Ru-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a conductive structure on a substrate. A removal process is performed to remove a portion of the dielectric layer to expose a portion of the conductive structure. The substrate is transported into a cleaning chamber having a wafer chuck below a bell jar structure. A cleaning process is performed to clean the exposed portion of the conductive structure by turning on a noble gas source to introduce a noble gas within the cleaning chamber, turning on an oxygen gas source to introduce oxygen within the cleaning chamber, applying a first bias to a plasma coil to form a plasma gas, and applying a second bias to the wafer chuck. The substrate is removed from the cleaning chamber. A conductive layer is formed over the dielectric layer and coupled to the conductive structure.