Memory device, memory system, and program method thereof

Abstract

Disclosure includes systems, methods and devices to program a memory device, involving a first and a second programming operations on a memory cell of the memory device. In the first programming operation, the memory cell is programmed into an intermediate state. In the second programming operation, the memory cell is programmed from the intermediate state into a target state. The first programming operation includes providing a bias voltage to a bit line coupled to the memory cell and providing a programming voltage to a word line coupled to the memory cell. An amplitude of the bias voltage provided to the bit line depends on the intermediate state or the target state the memory cell to be programmed into. Accordingly, no verification operation need to be performed on the memory cell in the first programming operation.