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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12205844 B1

PDFFull Text
Date of Patent:
Jan. 21, 2025

Filed:

Apr. 08, 2021

Plasma control method in semiconductor wafer fabrication

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Huang-Shao Ko, Kaohsiung, TW;

Jui-Fu Hsieh, Hsinchu County, TW;

Chih-Teng Liao, Hsinchu, TW;

Chih-Ching Cheng, Changhua County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Binh X Tran

Assistant Examiner:

Christopher Remavege

Int. Cl.
CPC ...
H01L 21/687 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68721 (2013.01); H01J 37/3244 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01L 21/6831 (2013.01); H01L 22/20 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method for processing a semiconductor wafer is provided. The method includes placing a first semiconductor wafer on a wafer chuck in a process chamber. The method further includes adjusting a distance between a gas dispenser positioned above the wafer chuck and an upper edge ring surrounding the wafer chuck. The method also includes producing a plasma for processing the first semiconductor wafer by exciting a gas dispenser from the gas dispenser after the adjustment. In addition, the method includes removing the first semiconductor wafer from the process chamber.

Find Patent Forward Citations

Ko, Huang-Shao. (2025). Plasma control method in semiconductor wafer fabrication (U.S. Patent No. 12205844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12205844

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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