The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jan. 30, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuei-Yu Kao, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Chen-Ping Chen, Toucheng Township, TW;
Chih-Han Lin, Hsinchu, TW;
Ming-Ching Chang, Hsinchu, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor structure includes selective use of a cladding layer during the fabrication process to provide critical dimension uniformity. The cladding layer can be formed before forming a recess in an active channel structure or can be formed after filling a recess in an active channel structure with dielectric material. These techniques can be used in semiconductor structures such as gate-all-around (GAA) transistor structures implemented in an integrated circuit.