The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Oct. 15, 2021
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01);
Abstract
A phase shift mask blank including a transparent substrate, an etching protection film formed on the transparent substrate, and a phase shift film formed in contact with the etching protection film, for exposure light being ArF excimer laser. The etching protection film is composed of a material containing hafnium and oxygen or hafnium, silicon and oxygen, and has a thickness of 1 to 30 nm, and a transmittance of not less than 85% with respect the exposure light, and the phase shift film is composed of a material containing silicon and being free of hafnium, and has a thickness of 50 to 90 nm.