The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Sep. 10, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Soo Doo Chae, Albany, NY (US);

Karthikeyan Pillai, Albany, NY (US);

Lior Huli, Albany, NY (US);

Na Young Bae, Albany, NY (US);

Hojin Kim, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02);
Abstract

In certain embodiments, a method of fabricating a device includes forming, on a substrate, a layer stack of alternating layers of a first spin-on material and a second spin-on material. Each layer of the first spin-on material and the second spin-on material is formed by spin-on deposition. The method includes etching first openings through the layer stack and filling the first openings with a third material. The method includes etching second openings through the layer stack, removing the first spin-on material from the layer stack, and replacing the first spin-on material with a fourth material. The fourth material is a first metal-containing material.


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