The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jan. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chuei-Tang Wang, Taichung, TW;

Wei Ling Chang, Hsinchu, TW;

Chieh-Yen Chen, Taipei, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 21/76877 (2013.01); H01L 23/53209 (2013.01); H01L 2224/0812 (2013.01); H01L 2224/085 (2013.01); H01L 2224/80894 (2013.01); H01L 2924/1437 (2013.01);
Abstract

In an embodiment, a method includes forming a device layer over a first substrate; forming a first interconnect structure over a front-side of the device layer; attaching a second substrate to the first interconnect structure; forming a second interconnect structure over a back-side of the device layer, the second interconnect structure comprising back-side memory elements, wherein the back-side memory elements and a first plurality of active devices of the device layer provide a first memory array; and forming conductive connectors over the second interconnect structure.


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