The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jun. 02, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Kai-Lin Chuang, Chia-Iyi, TW;

Tsung-Chi Chen, Taichung, TW;

Pei-Jung Chang, Taichung, TW;

Chun-Wei Huang, Taichung, TW;

Jun Xiu Liu, Taichung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); B05B 12/08 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); B05B 12/082 (2013.01); H01L 21/67288 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes: receiving a workpiece on which the semiconductor device is manufactured; causing a nozzle to dispense a fluid toward a surface of the workpiece external to the nozzle, wherein the nozzle includes a first channel and a second channel that allow the fluid to flow through; emitting light, by a light source, from within the nozzle toward the surface while the nozzle is dispensing the fluid; receiving light reflected from the surface by a light sensor, the light source and the light sensor being disposed within the nozzle and opposite to each other, and the emitted light and the reflected light adapted to be contained within the fluid; and examining a status of the reflected light. The emitted light and the reflected light propagate in a direction parallel to a longitudinal axis of each of the first channel and the second channel.


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