The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Aug. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ku-Feng Lin, Hsinchu, TW;

Jui-Che Tsai, Hsinchu County, TW;

Perng-Fei Yuh, Walnut Creek, CA (US);

Yih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); H01L 27/06 (2006.01); H03K 3/037 (2006.01); H03K 3/356 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); H01L 27/0629 (2013.01); H03K 3/037 (2013.01); H03K 3/35613 (2013.01);
Abstract

A sense amplifier including a first input transistor having a first input gate and a first drain/source terminal, a second input transistor having a second input gate and a second drain/source terminal, a latch circuit, and a first capacitor. The latch circuit includes a first latch transistor having a third drain/source terminal connected to the first drain/source terminal and a second latch transistor having a fourth drain/source terminal connected to the second drain/source terminal. The first capacitor is connected on one side to the first input gate and on another side to the fourth drain/source terminal to reduce a coupling effect in the sense amplifier.


Find Patent Forward Citations

Loading…