The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jun. 14, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tien-Lu Lin, Hsinchu, TW;
Che-Chen Wu, Hsinchu, TW;
Chia-Lin Chuang, Taoyuan, TW;
Yu-Ming Lin, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a gate electrode layer formed over a semiconductor substrate and capped with a conductive capping layer. The semiconductor device structure also includes an insulating capping stack having a lower surface that faces and is spaced apart from an upper surface of the conductive capping layer. In addition, the semiconductor device structure includes gate spacers formed over the semiconductor substrate and covering opposing sidewalls of the gate electrode layer, the conductive capping layer, and the insulating capping stack.