The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Aug. 09, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yi-How Chou, New Taipei, TW;
Tzu-Hao Fu, Kaohsiung, TW;
Tsung-Yin Hsieh, Tainan, TW;
Chih-Sheng Chang, Tainan, TW;
Shih-Chun Tsai, Pingtung County, TW;
Kun-Chen Ho, Tainan, TW;
Yang-Chou Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/76813 (2013.01); H01L 21/76826 (2013.01); H01L 21/76835 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01);
Abstract
A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.