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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12183590 B1

PDFFull Text
Date of Patent:
Dec. 31, 2024

Filed:

Mar. 13, 2023

Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor material

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

De-Wei Yu, Ping-tung, TW;

Chien-Hao Chen, Chuangwei Township, TW;

Chia-Ao Chang, Jinhu Township, TW;

Pin-Ju Liang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Ermias T Woldegeorgis

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/3205 (2006.01); H01L 21/324 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3247 (2013.01); H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/32055 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 21/02381 (2013.01); H01L 21/02428 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/823437 (2013.01); H01L 21/823814 (2013.01); H01L 29/665 (2013.01);
Abstract

A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

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