The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jul. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Hsi Wang, Hsinchu, TW;
Yen-Yu Chen, Hsinchu, TW;
Yi-Chih Chen, Hsinchu, TW;
Shih-Wei Bih, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3407 (2013.01); C23C 14/14 (2013.01); C23C 14/3464 (2013.01); H01J 37/3429 (2013.01); H01J 37/3435 (2013.01); H01L 21/2855 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01);
Abstract
A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.