The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Apr. 01, 2022
Applicant:

Semes Co., Ltd., Chungcheongnam-do, KR;

Inventors:

Min Sung Han, Gyeonggi-do, KR;

Jae Hoo Lee, Gyeonggi-do, KR;

Yoon Jong Ju, Gyeonggi-do, KR;

Wan Jae Park, Gyeonggi-do, KR;

Assignee:

SEMES CO., LTD., Chungcheongnam-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01J 37/32422 (2013.01); H01J 37/32477 (2013.01); H01J 37/32522 (2013.01); H01J 2237/334 (2013.01); H01L 21/31116 (2013.01);
Abstract

Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.


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