The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Apr. 06, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Michitaka Aita, Nirasaki, JP;

Ken Itabashi, Nirasaki, JP;

Ryota Ifuku, Nirasaki, JP;

Takaaki Kato, Nirasaki, JP;

Kazuki Yamada, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/48 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/482 (2013.01); C23C 16/401 (2013.01); C23C 16/45553 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01);
Abstract

A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.


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