The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jul. 20, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xinlei Jia, Wuhan, CN;
Shan Li, Wuhan, CN;
Yali Song, Wuhan, CN;
Lei Jin, Wuhan, CN;
Hongtao Liu, Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Xiangnan Zhao, Wuhan, CN;
Yuan-Yuan Min, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A memory device includes a memory array including memory strings, each memory string comprising a plurality of first memory cells, a plurality of second memory cells, and one or more dummy memory cells between the first memory cells and the second memory cells. The first memory cells are between drain terminals of the memory strings and the dummy memory cells, and the second memory cells are between source terminals of the memory strings and the dummy memory cells. The bit lines are respectively coupled to drain terminals of the memory strings. The word lines are respectively coupled to gate terminals of the first memory cells and the second memory cells. A word line driver is configured to apply a first voltage signal to each of the word lines that are coupled to the gate terminals of the first memory cells during a pre-charge phase.