The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Jun. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bi-Shen Lee, Hsinchu, TW;

Tzu-Yu Lin, Taoyuan, TW;

Yi-Yang Wei, Hsinchu, TW;

Hai-Dang Trinh, Hsinchu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Cheng-Yuan Tsai, Chu-Pei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H10B 53/30 (2023.02);
Abstract

In some embodiments, the present disclosure relates to a memory device including a semiconductor substrate, a first electrode disposed over the semiconductor substrate, a ferroelectric layer disposed between the first electrode and the semiconductor substrate, and a first stressor layer separating the first electrode from the ferroelectric layer. The first stressor layer has a coefficient of thermal expansion greater than that of the ferroelectric layer.


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