The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Aug. 10, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Chen Zhang, Santa Clara, CA (US);
Julien Frougier, Albany, NY (US);
Alexander Reznicek, Troy, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/6653 (2013.01); H01L 29/66666 (2013.01);
Abstract
A uniform moon-shaped bottom spacer for a VTFET device is provided utilizing a replacement bottom spacer that is epitaxially grown above a bottom source/drain region. After filling a trench that is formed into a substrate with a dielectric fill material that also covers the replacement bottom spacer, the replacement bottom spacer is accessed, removed and then replaced with a moon-shaped bottom spacer.