The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Aug. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien-Ying Wu, Hsinchu, TW;

Yuehying Lee, Hsinchu, TW;

Sui-Ying Hsu, Hsinchu, TW;

Chen-Hao Huang, Hsinchu, TW;

Chien-Chang Lee, Hsinchu, TW;

Chia-Ping Lai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); G02B 6/30 (2006.01); G02B 6/34 (2006.01);
U.S. Cl.
CPC ...
G02B 6/13 (2013.01); G02B 6/12 (2013.01); G02B 6/136 (2013.01); G02B 6/30 (2013.01); G02B 6/34 (2013.01);
Abstract

A method of making a photonic device includes depositing a cladding layer over a silicon layer. The method further includes patterning the cladding layer to expose a first portion of the silicon layer, wherein a second portion of the silicon layer is covered by the patterned cladding layer, and a waveguide portion is in the second portion of the silicon layer. The method further includes depositing a low refractive index layer directly over the patterned cladding layer, wherein a refractive index of the low refractive index layer is less than a refractive index of silicon nitride.


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