The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Aug. 16, 2022
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Julien Frougier, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Min Gyu Sung, Latham, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of present invention provide a ferroelectric random-access memory (FeRAM) cell. The FeRAM cell includes a vertical channel between a bottom source/drain region and a top source/drain region; a gate oxide surrounding the vertical channel; and a ferroelectric layer surrounding the gate oxide, wherein the ferroelectric layer has two or more sections of different horizontal thicknesses between the bottom source/drain region and the top source/drain region. A method of manufacturing the FeRAM cell is also provided.