The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Nov. 19, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 24/96 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01); H01L 23/544 (2013.01); H01L 22/12 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/95121 (2013.01);
Abstract
A shift control method in manufacture of semiconductor device includes at least the following step. A plurality of semiconductor dies is encapsulated with an insulating encapsulation over a carrier, where at least portions of the plurality of semiconductor dies are shifted after encapsulating. A lithographic pattern is formed at least on the plurality of semiconductor die, where forming the lithographic pattern includes compensating for a shift in a position of the portions of the plurality of semiconductor dies.