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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12148719 B1

PDFFull Text
Date of Patent:
Nov. 19, 2024

Filed:

Jul. 20, 2022

Forming large chips through stitching

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wen Hsin Wei, Hsinchu, TW;

Hsien-Pin Hu, Zhubei, TW;

Shang-Yun Hou, Jubei, TW;

Weiming Chris Chen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/58 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/76808 (2013.01); H01L 21/76816 (2013.01); H01L 23/585 (2013.01); H01L 24/00 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 23/3128 (2013.01); H01L 23/53238 (2013.01); H01L 23/5329 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method includes performing a first light-exposure and a second a second light-exposure on a photo resist. The first light-exposure is performed using a first lithograph mask, which covers a first portion of the photo resist. The first portion of the photo resist has a first strip portion exposed in the first light-exposure. The second light-exposure is performed using a second lithograph mask, which covers a second portion of the photo resist. The second portion of the photo resist has a second strip portion exposed in the second light-exposure. The first strip portion and the second strip portion have an overlapping portion that is double exposed. The method further includes developing the photo resist to remove the first strip portion and the second strip portion, etching a dielectric layer underlying the photo resist to form a trench, and filling the trench with a conductive feature.

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