The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jan. 03, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien-Chih Lin, Taichung, TW;
Yen-Ting Chen, Taichung, TW;
Wen-Kai Lin, Yilan County, TW;
Szu-Chi Yang, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Tsung-Hung Lee, Hsinchu, TW;
Ming-Lung Cheng, Qieding Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.