The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jul. 24, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shahaji B. More, Hsinchu, TW;
Chun Hsiung Tsai, Hsinchu County, TW;
Shih-Chieh Chang, Taipei, TW;
Kuo-Feng Yu, Hsinchu County, TW;
Cheng-Yi Peng, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/02667 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H01L 21/324 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/41791 (2013.01); H01L 29/45 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 21/02068 (2013.01); H01L 21/02532 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/823425 (2013.01); H01L 21/823431 (2013.01); H01L 29/161 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor structure includes a substrate, a semiconductor fin extending from the substrate, and a silicon germanium (SiGe) epitaxial feature disposed over the semiconductor fin. A gallium-implanted layer is disposed over a top surface of the SiGe epitaxial feature, and a silicide feature is disposed over and in contact with the gallium-implanted layer.