The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jul. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Wei-Han Chiang, Hsinchu, TW;

Chun-Hung Chen, Xinpu Township, TW;

Ching-Ho Cheng, Hsinchu, TW;

Hsiao Ching-Wen, Hsinchu, TW;

Hong-Seng Shue, Zhubei, TW;

Ming-Da Cheng, Taoyuan, TW;

Wei Sen Chang, Jinsha Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/645 (2013.01); H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/145 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 28/10 (2013.01); H01L 2221/6835 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19103 (2013.01);
Abstract

An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.


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