The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jul. 08, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Ming Lin, Hsinchu, TW;
Han-Yu Lin, Hsinchu, TW;
Wei-Yen Woon, Hsinchu, TW;
Mrunal Abhijith Khaderbad, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/02321 (2013.01); H01L 21/0259 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4983 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device includes a semiconductor feature, a low-k dielectric feature that is formed on the semiconductor feature, and a Si-containing layer that contains elements of silicon and that covers over the low-k dielectric feature. The Si-containing layer can prevent the low-k dielectric feature from being damaged in etch and/or annealing processes for manufacturing the semiconductor device.