The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Mar. 28, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Hung Wei Li, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Mauricio Manfrini, Zhubei, TW;
Kuo-Chang Chiang, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A transistor device and method of making the same, the transistor device including: a substrate; a word line disposed on the substrate; a gate insulating layer disposed on the word line; a dual-layer semiconductor channel including: a first channel layer disposed on the gate insulating layer; and a second channel layer disposed on the first channel layer, such that the second channel layer contacts side and top surfaces of the first channel layer; and source and drain electrodes electrically coupled to the second channel layer. When a voltage is applied to the word line, the first channel layer has a first electrical resistance and the second channel layer has a second electrical resistance that is different from the first electrical resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile