The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Mar. 17, 2020
Lam Research Corporation, Fremont, CA (US);
Purushottam Kumar, Hillsboro, OR (US);
Gengwei Jiang, Tigard, OR (US);
Bart J. Van Schravendijk, Palo Alto, CA (US);
Tengfei Miao, Beaverton, OR (US);
Joseph R. Abel, West Linn, OR (US);
Adrien Lavoie, Newberg, OR (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion barrier layer are removed.