The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Dec. 14, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Jia-Heng Wang, Kaohsiung, TW;

I-Wen Wu, Hsinchu, TW;

Chen-Ming Lee, Taoyuan County, TW;

Fu-Kai Yang, Hsinchu, TW;

Mei-Yun Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02236 (2013.01); H01L 21/2253 (2013.01); H01L 21/268 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor structure includes semiconductor fins disposed over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fins, where a top surface portion of the epitaxial S/D feature includes two surfaces slanted downward toward each other at an angle, a silicide layer disposed conformally over the top portion of the epitaxial S/D feature, and an S/D contact disposed over the silicide layer, where a bottom portion of the S/D contact extends into the epitaxial S/D feature.


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