The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Mar. 26, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroaki Ashizawa, Nirasaki, JP;
Hideo Nakamura, Nirasaki, JP;
Yosuke Serizawa, Nirasaki, JP;
Yoshikazu Ideno, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02186 (2013.01); C23C 16/34 (2013.01); C23C 16/345 (2013.01); C23C 16/4408 (2013.01); C23C 16/45525 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/02192 (2013.01); H01L 21/0228 (2013.01);
Abstract
A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.