The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Jul. 20, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ru-Shang Hsiao, Jhubei, TW;
Ching-Hwanq Su, Tainan, TW;
Pin Chia Su, Shanhua Township, TW;
Ying Hsin Lu, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a dummy gate stack over a semiconductor region, removing the dummy gate stack to form a trench between gate spacers, forming a replacement gate dielectric extending into the trench, and forming a replacement gate electrode on the replacement gate dielectric. The forming the replacement gate electrode includes depositing a metal-containing layer. The depositing the metal-containing layer includes depositing a lower layer having a first average grain size, and depositing an upper layer over the lower layer. The lower layer and the upper layer are formed of a same material, and the upper layer has a second average grain size greater than the first average grain size. Source and drain regions are formed on opposing sides of the replacement gate electrode.