The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Jul. 29, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Chung Chang, Nantou County, TW;
Sung-En Lin, Hsinchu County, TW;
Chung-Ting Ko, Hsinchu, TW;
You-Ting Lin, Hsinchu, TW;
Yi-Hsiu Liu, Hsinchu, TW;
Po-Wei Liang, Hsinchu, TW;
Jiun-Ming Kuo, Taipei, TW;
Yung-Cheng Lu, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
Yuan-Ching Peng, Hsinchu, TW;
Jen-Hong Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.