The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Oct. 14, 2020
Applicant:

Adeia Semiconductor Technologies Llc, San Jose, CA (US);

Inventors:

Javier A. Delacruz, San Jose, CA (US);

Pearl Po-Yee Cheng, Los Altos, CA (US);

David Edward Fisch, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/14511 (2013.01);
Abstract

The present disclosure provides for a stacked memory combining RAM and one or more layers of NVM, such as NAND. For example, a first layer of RAM, such as DRAM, is coupled to multiple consecutive layers of NAND using direct bonding interconnect (DBI®). Serialization and overhead that exists in periphery of the NVM may be stripped to manage the data stored therein. The resulting connections between the RAM and the NVM are high bandwidth, high pincount interconnects. Interconnects between each of the one or more layers of NVM are also very dense.


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