The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Mar. 17, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tatsuya Miyahara, Yamanashi, JP;
Daisuke Suzuki, Yamanashi, JP;
Yoshihiro Takezawa, Yamanashi, JP;
Yuki Tanabe, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02667 (2013.01); C23C 16/0272 (2013.01); C23C 16/24 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/0262 (2013.01); H01L 21/02645 (2013.01);
Abstract
A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.