The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Aug. 01, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Jung-Tang Wu, Kaohsiung, TW;
Szu-Hua Wu, Zhubei, TW;
Chin-Szu Lee, Taoyuan, TW;
Yi-Lin Wang, Kaohsiung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/16 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01); H01L 21/285 (2006.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H01J 37/3476 (2013.01); C23C 14/165 (2013.01); C23C 14/34 (2013.01); C23C 14/3457 (2013.01); H01J 37/3244 (2013.01); H01J 37/3426 (2013.01); H01L 21/2855 (2013.01); H10N 50/01 (2023.02); H01J 2237/327 (2013.01);
Abstract
A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N), He, Ne, and combinations thereof.