The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Nov. 02, 2021
Intel Corporation, Santa Clara, CA (US);
Carl Naylor, Portland, OR (US);
Abhishek Sharma, Hillsboro, OR (US);
Mauro Kobrinsky, Portland, OR (US);
Christopher Jezewski, Portland, OR (US);
Urusa Alaan, Hillsboro, OR (US);
Justin Weber, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Transistor structures with a channel semiconductor material that is passivated with two-dimensional (2D) crystalline material. The 2D material may comprise a semiconductor having a bandgap offset from a band of the channel semiconductor. The 2D material may be a thin as a few monolayers and have good temperature stability. The 2D material may be a conversion product of a sacrificial precursor material, or of a portion of the channel semiconductor material. The 2D material may comprise one or more metal and a chalcogen. The channel material may be a metal oxide semiconductor suitable for low temperature processing (e.g., IGZO), and the 2D material may also be compatible with low temperature processing (e.g., <450° C.). The 2D material may be a chalcogenide of a metal present in the channel material (e.g., ZnSor ZnSe) or of a metal absent from the channel material when formed from a sacrificial precursor.